Project title: Development of a-Si memristors for neuromorphic computing

Description:
Memristors are two-terminal non-volatile memory devices based on resistance switching. When subjected to an external electric field, memristors can take on a set of intermediate resistance states, between two extremes: ON (low resistance) and OFF (high resistance). The primary application of memristors is vector-by-matrix multiplication – a key operation in classification and recognition tasks using neural networks. And for that, memristors are usually assembled in crossbar arrays.

During this internship, students will participate in the development of a-Si memristors with Ag/Cu conducting channels and work on improving their characteristics. Interns will:

➔Fabricate memristors: create pattern designs for lithography, do optical lithography of nanostructures, and deposit materials using DC/RF magnetron sputtering;
➔Conduct electrical DC measurements of stand-alone memristors and crossbar arrays;
➔Develop a perceptron represented by a crossbar array of memristors: assemble an experimental setup, automate testing using LabVIEW, and conduct preliminary experiments to analyse the efficiency of memristor-based perceptrons.

As an intern you will gain hands-on experience in fabrication in a clean room facility, assembly of experimental setups and DC measurements.

We are looking for motivated interns to join the Laboratory of Advanced Electronic Devices and contribute to the cutting-edge research in memristor technology!

Candidates requirements:
➔ Knowledge of Electricity and Solid State Physics
➔ Proficiency in English (both written and spoken)

Supervisor: Professor Vladimir Antonov

Internship duration: up to 6 months

The start date of the internship: Negotiable

Monthly compensation: With No compensation

Contact person: Alena Samsonova, alena.samsonova@skoltech.ru